Strain response of monolayer MoS2 in the ballistic regime

Abstract

Two-dimensional (2-D) materials are perfect channels for ultra thin body (UTB) device due to the perfect electrostatic control. Graphene is the most well-known 2-D material with high mobility but lack of bandgap. To overcome the shortage of graphene-based transistors, 2-D monolayer transition metal dichalcogenides (TMD) with intrinsic bandgap (1eV~2eV) have drawn much attention. MoS2 is expected to be one of the promising candidates among all TMD materials for the channels of UTB FETs [1][2]. Strain technology is in fact responsible for an alteration of the band structure in silicon to enhance the device performance [3]. With the appropriate strain engineering on the 2-D materials, the implementation to novel technology process of high performance transistor could be realized.