Time domain approach for the evaluation of RC delays effects in ULSI interconnect lines

Abstract

The evaluation of RC effects in ULSI technology is important both for process development and for accuracy verification of back-end modeling and cad-tools. The paper proposes a new methodology with one possible implementation for the measurement of RC delays in ULSI interconnect lines (DUT). The proposed implementation has been developed at wafer level by means of a mid-complexity test circuit whose working principle is based on the comparison between the RC delay of the DUT and a well-known reference delay generated on-chip.