Optimization Strategy for Accelerating Multi-Bit Resistive Weight Programming on the RRAM Array

Junren Chen, Huaqiang Wu, B. Gao, Jianshi Tang, Wenqiang Zhang, H. Qian
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引用次数: 2

Abstract

To program the RRAM cells as multi-bit synaptic weights is attractive for neuromorphic computing. In this work, we experimentally studied the optimization strategy for accelerating multi-bit resistive weight programming at the array level, which is different from standalone single cells. The results suggest that a certain degree of overshoot on part of cells can improve overall programming speed. But excessive overshooting would reduce the programming success rate. With an optimized conductance tuning step size to program 4 bit/cell on the array, a ~5× speedup is achieved compared to traditional optimized ISPP scheme which is based on standalone single cells, and a high 99.94% overall success rate is experimentally realized when mapping a grayscale image on a 160Kb RRAM array with 4-bit precision. Moreover, the statistics indicate that a customized conductance tuning step size can be designed for individual target conductance levels to achieve the best performance with the fastest programming and a high programming success rate.
加速RRAM阵列上多位电阻权编程的优化策略
将RRAM细胞编程为多比特突触权是神经形态计算的一个重要研究方向。在这项工作中,我们实验研究了阵列级加速多位电阻权重编程的优化策略,这不同于独立的单个单元。结果表明,部分单元的一定程度的超调可以提高整体编程速度。但是过度调整会降低编程的成功率。通过优化的电导调谐步长,在阵列上编程4位/单元,与基于独立单单元的传统优化ISPP方案相比,实现了约5倍的加速,并且在160Kb RRAM阵列上以4位精度映射灰度图像时,实验实现了99.94%的总体成功率。此外,统计数据表明,可以针对单个目标电导水平设计定制的电导调谐步长,以最快的编程速度和较高的编程成功率实现最佳性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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