{"title":"Tunable logic of complex variables and quantum networks on its basis","authors":"N. Plyusnin","doi":"10.31776/rtcj.10404","DOIUrl":null,"url":null,"abstract":"Continuous - additive-multiplicative (AM) logic is considered, in which logical operations are replaced by algebraic operations («×» and «+») or operations with vectors, and binary variables «0» and «1» are replaced by continuous scalar ones («0- 1») or complex variables. To build this logic, a continuous analogue of the canonical form of Boolean logic is used in the form of a perfect disjunctive or conjunctive normal form (KAM logic). A feature of KAM logic is a continuous dependence on input variables and a potential variety of continuous logic functions. Based on the previously proposed «fuzzy» (distributed) continuous function, in the form of a superposition of «clear» functions, and the tunable QAM element circuit that implements it, this element is generalized to a network QAM element with several tunable outputs. The multiplication functions in this QAM element can be performed using a known memristor, which can be replaced by a memtransistor based on a field effect transistor. In quantum QAM networks, these elements are, respectively: «k-memristor» and «k-memtransistor». One of the options for a k-memtransistor is a composite hybrid spin-field-effect transistor based on a planar spin valve with magnetic memory and a field-effect transistor with a ferroelectric memory. It is noted that the main technological problem of quantum QAM networks based on such a hybrid spin transistor is the creation of planar conducting and ferromagnetic elements based on ultrathin metallic and ferromagnetic films on silicon.","PeriodicalId":376940,"journal":{"name":"Robotics and Technical Cybernetics","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Robotics and Technical Cybernetics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.31776/rtcj.10404","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Continuous - additive-multiplicative (AM) logic is considered, in which logical operations are replaced by algebraic operations («×» and «+») or operations with vectors, and binary variables «0» and «1» are replaced by continuous scalar ones («0- 1») or complex variables. To build this logic, a continuous analogue of the canonical form of Boolean logic is used in the form of a perfect disjunctive or conjunctive normal form (KAM logic). A feature of KAM logic is a continuous dependence on input variables and a potential variety of continuous logic functions. Based on the previously proposed «fuzzy» (distributed) continuous function, in the form of a superposition of «clear» functions, and the tunable QAM element circuit that implements it, this element is generalized to a network QAM element with several tunable outputs. The multiplication functions in this QAM element can be performed using a known memristor, which can be replaced by a memtransistor based on a field effect transistor. In quantum QAM networks, these elements are, respectively: «k-memristor» and «k-memtransistor». One of the options for a k-memtransistor is a composite hybrid spin-field-effect transistor based on a planar spin valve with magnetic memory and a field-effect transistor with a ferroelectric memory. It is noted that the main technological problem of quantum QAM networks based on such a hybrid spin transistor is the creation of planar conducting and ferromagnetic elements based on ultrathin metallic and ferromagnetic films on silicon.