Tunable logic of complex variables and quantum networks on its basis

N. Plyusnin
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Abstract

Continuous - additive-multiplicative (AM) logic is considered, in which logical operations are replaced by algebraic operations («×» and «+») or operations with vectors, and binary variables «0» and «1» are replaced by continuous scalar ones («0- 1») or complex variables. To build this logic, a continuous analogue of the canonical form of Boolean logic is used in the form of a perfect disjunctive or conjunctive normal form (KAM logic). A feature of KAM logic is a continuous dependence on input variables and a potential variety of continuous logic functions. Based on the previously proposed «fuzzy» (distributed) continuous function, in the form of a superposition of «clear» functions, and the tunable QAM element circuit that implements it, this element is generalized to a network QAM element with several tunable outputs. The multiplication functions in this QAM element can be performed using a known memristor, which can be replaced by a memtransistor based on a field effect transistor. In quantum QAM networks, these elements are, respectively: «k-memristor» and «k-memtransistor». One of the options for a k-memtransistor is a composite hybrid spin-field-effect transistor based on a planar spin valve with magnetic memory and a field-effect transistor with a ferroelectric memory. It is noted that the main technological problem of quantum QAM networks based on such a hybrid spin transistor is the creation of planar conducting and ferromagnetic elements based on ultrathin metallic and ferromagnetic films on silicon.
复杂变量的可调逻辑及其基础上的量子网络
考虑连续-加-乘(AM)逻辑,其中逻辑运算被代数运算(“x”和“+”)或向量运算取代,二进制变量“0”和“1”被连续标量变量(“0- 1”)或复变量取代。为了构建这种逻辑,布尔逻辑的规范形式的连续模拟被用于完全析取或合取范式(KAM逻辑)的形式。KAM逻辑的一个特征是对输入变量的连续依赖和连续逻辑函数的潜在变化。基于先前提出的“模糊”(分布)连续函数,以“清晰”函数的叠加形式,以及实现它的可调谐QAM元件电路,该元件被推广到具有多个可调谐输出的网络QAM元件。该QAM元件中的乘法函数可以使用已知的忆阻器来执行,该忆阻器可以由基于场效应晶体管的忆阻器取代。在量子QAM网络中,这些元件分别是:“k-忆阻器”和“k-忆晶体管”。k-memt晶体管的选择之一是基于具有磁记忆的平面自旋阀和具有铁电记忆的场效应晶体管的复合混合自旋场效应晶体管。本文指出,基于这种混合自旋晶体管的量子QAM网络的主要技术问题是基于硅上超薄金属和铁磁薄膜的平面导电和铁磁元件的创建。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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