{"title":"Analysis and measurement of a novel on-chip variable delay transmission line with fixed characteristic impedance","authors":"W. Woods, H. Ding, Guoan Wang","doi":"10.1109/SMIC.2010.5422949","DOIUrl":null,"url":null,"abstract":"RF designs such as phased array antenna systems make use of on-chip electronically controllable delay elements. This paper presents simulations and measurements of on-chip variable delay transmission lines with fixed characteristic impedance in two different technologies. EM simulations in a 130 nm BiCMOS technology show a delay change of 15.6 % is possible while the characteristic impedance of the novel transmission line varies a maximum of 3.7% from the 50 Ω target between two possible delay states. Measurement results from a 45 nm SOI digital technology reveal a maximum delay change of 16.0 % and a maximum characteristic impedance deviation between delay states of 7.4% in a 10 GHz region of the Ka-band between 25 GHz and 35 GHz.","PeriodicalId":404957,"journal":{"name":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMIC.2010.5422949","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
RF designs such as phased array antenna systems make use of on-chip electronically controllable delay elements. This paper presents simulations and measurements of on-chip variable delay transmission lines with fixed characteristic impedance in two different technologies. EM simulations in a 130 nm BiCMOS technology show a delay change of 15.6 % is possible while the characteristic impedance of the novel transmission line varies a maximum of 3.7% from the 50 Ω target between two possible delay states. Measurement results from a 45 nm SOI digital technology reveal a maximum delay change of 16.0 % and a maximum characteristic impedance deviation between delay states of 7.4% in a 10 GHz region of the Ka-band between 25 GHz and 35 GHz.