The resonant method: an approximate method for extracting the effective parasitic capacitance of a large signal transistor

Abstract

The paper describes a simplified method for extracting the effective parasitic capacitances of a packaged LDMOS power transistor using simple de-embedded 2-port S-parameter extraction method. A study case is also discussed with the results verified empirically. This method uses three simultaneous equations to solve for the three capacitances most important to the PA designer, namely, the effective output capacitance, C/sub oss/, the effective input capacitance, C/sub iss/, and the effective feedback capacitance, C/sub rss/.