Pattern design optimizing for GAT type power bipolar transistors

Abstract

In this paper, the experimental results of planar pattern design optimizing aimed at current rating improvement for GAT type high-voltage high-speed power bipolar transistors are reported. These results show that the presently proposed pattern design with the base and emitter stripes intersected, obliquely and the base contacts arranged in island arrays is superior to that published by the inventor of GAT. The current rating is improved by 80%, while the switching fall time is reduced by 1/4.