Low-noise monolithic oscillator with an integrated three-dimensional inductor

2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC. Pub Date : 2003-02-09 DOI:10.1109/ISSCC.2003.1234351

K. Van Schuylenbergh, B. Griffiths, C. Chua, D. Fork, J. Lu

引用次数: 16

Abstract

A balanced silicon BiCMOS oscillator using self-assembled curled circular spring 3D inductor with peak Q of 40 reduces phase noise by 12.3dB at 100kHz offset compared to conventional planar spiral inductor approach. The addition of a 5/spl mu/m copper underlayer raises Q to 85.

查看原文本刊更多论文

具有集成三维电感的低噪声单片振荡器

采用自组装卷曲圆弹簧三维电感的平衡硅BiCMOS振荡器，峰值Q为40，在100kHz偏置时，与传统平面螺旋电感相比，相位噪声降低了12.3dB。增加一个5/spl mu/m的铜底层将Q提高到85。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC.

自引率

0.00%

发文量