Solution Processed Metal Oxide in Emerging Electronic Devices

Abstract

Recently, solution processed metal oxide (MO) attracts wide interests due to the advantages including low-cost fabrication, procedure simplicity and vacuum-free technique. Within the paper, the synthesis mechanism of metal oxide deposited through solution process is firstly briefly introduced. Then the recent advances and progress on n-type solution processed MO semiconductors as well as the solution processed MO gate dielectrics have been reviewed for thin-film transistors.