Two schemes to reduce interconnect delay in bi-directional and uni-directional buses

K. Nose, T. Sakurai
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引用次数: 31

Abstract

As the device dimension is scaled down, interconnect RC delay becomes dominant performance limiter in high-performance VLSIs. Another issue in the submicron interconnects is a drastic increase of coupling capacitance due to the higher aspect ratio to reduce the interconnect resistance. The increase of the coupling capacitance degrades signal integrity, inducing noise problems and delay fluctuation problems. Buffer insertion (repeater insertion) is one of the most effective ways to decrease the interconnect delay. The original buffer insertion, however, cannot be applied to bi-directional buses because the buffer is uni-directional in nature. Some circuit configurations that can be applied to bi-directional buses have been proposed. These circuits turn out to be prone to malfunctions when there is a noise from adjacent lines in scaled down interconnect systems where capacitive coupling is large. A new buffer insertion scheme for bi-directional buses, namely the dual-rail bus (DRB) scheme, which does not have noise problems is proposed and measured in this paper. Another proposal is on a high-speed buffer insertion scheme for uni-directional buses by making use of staggered firing. The staggered firing bus (SFIB) is proposed and measured.
两种减少双向和单向总线互连延迟的方案
随着器件尺寸的缩小,互连RC延迟成为高性能vlsi中主要的性能限制因素。亚微米互连的另一个问题是由于更高的宽高比以减少互连电阻而导致耦合电容的急剧增加。耦合电容的增加降低了信号的完整性,引起噪声问题和延迟波动问题。缓冲器插入(中继器插入)是减少互连延迟的最有效方法之一。然而,原来的缓冲区插入不能应用于双向总线,因为缓冲区本质上是单向的。提出了一些适用于双向总线的电路结构。在电容耦合较大的按比例缩小的互连系统中,当相邻线路存在噪声时,这些电路容易发生故障。本文提出了一种新的双向总线缓冲器插入方案,即双轨总线(DRB)方案,该方案不存在噪声问题。另一项建议是利用交错发射的方式为单向总线提供高速缓冲区插入方案。提出并测量了交错发射总线(SFIB)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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