Realization of robust 600V high side gate drive IC with a new isolated self-shielding structure

Abstract

A robust high side gate driver IC adapting new self-shielding concept with perfect isolation structure is experimentally realized. The fully depleted p-isolation region with low doping impurity gets rid of the crosstalk problem caused by leakage currents, which is essential problem of 600V, rated HVIC using self-shielding structure, between two LDMOS used as level shifters. In addition, highly doped n+ buried layer in the high side island region of proposed structure has led good dV/dt immunity. An HVIC adapting proposed structure has shown 65 kV/us of dV/dt characteristics and good characteristics for high side IGBT driving.