MS-EMC vs. NEGF: A comparative study accounting for transport quantum corrections

Abstract

As electronic devices approach the nanometer scale, quantum transport theories have been recognized as the best option to reproduce their performance. Other possible trend, mainly focused on reducing the computational effort, is the inclusion of quantum effects in semi-classical simulators. This work presents a comparison between a NEGF simulator and a MS-EMC tool including S/D tunneling both applied on a DGSOI transistor.