Gallium nitride based ballistic electron acceleration negativedifferentialconductivity diodes for potential THZ applications

Abstract

In order to achieve operation at terahertz frequency, electronic devices are required to reach the highest possible transit velocity, even if this velocity is limited to a short distance. The concept of ballistic electrons in compound semiconductors was initially reported using GaAs (Shur and Eastman, 1979). In this work, progress in initial research on GaN based ballistic electron acceleration negative-differential-conductivity (BEAN) diodes for potential THz oscillator is reported along with their device concepts