One-directional 3D-SiC MESFET for high power applications

Abstract

A one-directional 3D normally-on SiC MESFET, suitable for safe multi-KW/cm2 power applications, is designed and analyzed using the numerical analysis simulator, Silvaco Atlas. The analyses show that the drain current is a 100% higher than a surface device with the same dimensions, while occupying less than 33% of the area. At gate voltage of 0V, the drain current reaches 600 mA/mm with a breakdown voltage greater than 600V. The proposed vertical structure allows for more efficient heat dissipation and can be easily connected in parallel to provide power of more than 10 kW/cm2.