A Highly Efficient 0.2 THz Varactor-Less VCO with -7 dBm Output Power in 130nm SiGe

Pei-Yuan Chiang, O. Momeni, P. Heydari
{"title":"A Highly Efficient 0.2 THz Varactor-Less VCO with -7 dBm Output Power in 130nm SiGe","authors":"Pei-Yuan Chiang, O. Momeni, P. Heydari","doi":"10.1109/CSICS.2012.6340100","DOIUrl":null,"url":null,"abstract":"A highly efficient voltage controlled oscillator (VCO) with a new varactor-less-based frequency-tuning topology for terahertz (THz) frequencies is presented. The tuning technique is based on a variable inductance seen at the emitter node of a base degenerated transistor. Fabricated in a 130nm SiGe BiCMOS process, the VCO achieves a tuning range of 3.5% and output power of -7.25 dBm at 201.5GHz. The VCO consumes 30mW of DC power, resulting in a record-breaking power efficiency of 0.6%. To demonstrate the functionality of the tuning technique, three other VCO prototypes at different oscillation frequencies, including one operating at 222.7~229 GHz range, have been implemented.","PeriodicalId":290079,"journal":{"name":"2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2012.6340100","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11

Abstract

A highly efficient voltage controlled oscillator (VCO) with a new varactor-less-based frequency-tuning topology for terahertz (THz) frequencies is presented. The tuning technique is based on a variable inductance seen at the emitter node of a base degenerated transistor. Fabricated in a 130nm SiGe BiCMOS process, the VCO achieves a tuning range of 3.5% and output power of -7.25 dBm at 201.5GHz. The VCO consumes 30mW of DC power, resulting in a record-breaking power efficiency of 0.6%. To demonstrate the functionality of the tuning technique, three other VCO prototypes at different oscillation frequencies, including one operating at 222.7~229 GHz range, have been implemented.
一种高效的0.2 THz无变容压控振荡器,输出功率为-7 dBm,尺寸为130nm
提出了一种高效的电压控制振荡器(VCO),该振荡器具有一种新的基于无变容体的太赫兹频率调谐拓扑结构。该调谐技术是基于基极简并晶体管发射极节点上的可变电感。该VCO采用130nm SiGe BiCMOS工艺制造,在201.5GHz时可实现3.5%的调谐范围和-7.25 dBm的输出功率。VCO消耗30mW的直流功率,从而创造了0.6%的破纪录的功率效率。为了证明调谐技术的功能,另外三个不同振荡频率的压控振荡器原型已经实现,其中一个工作在222.7~229 GHz范围内。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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