IOS-a new type of materials combination for system-on-a chip preparation

Abstract

IOS (insulator-on-semiconductor) has emerged as a new type of materials combination for system-on-a chip preparation. For high frequency mobile communication systems, a thin layer of piezoelectric or ferroelectric oxide crystal such as quartz, LiTaO/sub 3/ or LiNbO/sub 3/ on Si is required for high Q-factor and low temperature coefficient SAW filters, surface resonators and oscillators. Combining these materials with Si can lead to the integration of electronic and acoustic devices on the same chip. Voltage-controlled and temperature-compensated high Q-factor crystal oscillators and resonators can thus be realized. The integration of high performance GaAs photodetectors with LiNbO/sub 3/ waveguides makes integrated optical circuits possible. By preparing a thin layer of single crystalline transition metal oxides such as magnetic garnets on Si or on III-V semiconductors, stabilized laser diodes can be realized due to the availability of on-chip thin film optical isolators and circulators. Layer transfer by wafer bonding and H-induced layer splitting provides a manufacturable technology for IOS preparation. In this study, we report feasibility study results for IOS preparation with an insulator layer of many single crystalline insulators such as c-sapphire, LaAlO/sub 2/, PLZT and LiNbO/sub 3/. We have demonstrated that surface blistering and layer splitting of these materials is possible if H implantation is performed at wafer temperatures within the specific temperature range for each material.