Optical bleaching in electrical pumped n-doped Ge on Si optical devices

Abstract

In this presentation we discussed the growth and the optical properties of n-doped Ge lateral LEDs. We showed, that the optical bleaching of the material and the corresponding decrease of net absorption in the Fabry-Perot cavity leads to higher electroluminescence intensity. This is a very important step to achieve net-gain inside the indirect semiconductor material Ge and to build a laser device5 with low threshold current densities.