Energy level consideration of source/channel/drain for performance enhancements of N- and P-channel organic FETs

T. Yokoyama, T. Nishimura, K. Kita, K. Kyuno, A. Toriumi
{"title":"Energy level consideration of source/channel/drain for performance enhancements of N- and P-channel organic FETs","authors":"T. Yokoyama, T. Nishimura, K. Kita, K. Kyuno, A. Toriumi","doi":"10.1109/DRC.2005.1553078","DOIUrl":null,"url":null,"abstract":"This paper discusses a possible way to achieve better FET performances for both channels as well as a determination mechanism of the channel type. We investigated perfluoropentace (C22F14) (PF-pentacene) for n-channel and pentacene (C22F14) for p-channel FETs. On the basis of the energy level consideration for both channel material and S/D metals, we show a systematic guideline for achieving a better OFET performance","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"63rd Device Research Conference Digest, 2005. DRC '05.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2005.1553078","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

This paper discusses a possible way to achieve better FET performances for both channels as well as a determination mechanism of the channel type. We investigated perfluoropentace (C22F14) (PF-pentacene) for n-channel and pentacene (C22F14) for p-channel FETs. On the basis of the energy level consideration for both channel material and S/D metals, we show a systematic guideline for achieving a better OFET performance
提高N沟道和p沟道有机场效应管性能的源/沟道/漏极能级考虑
本文讨论了一种可能的方法来实现更好的两个通道的场效应管性能,以及通道类型的确定机制。我们研究了n沟道的全氟戊烯(C22F14) (PF-pentacene)和p沟道fet的全氟戊烯(C22F14)。基于通道材料和S/D金属的能级考虑,我们展示了实现更好的OFET性能的系统指导方针
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信