F-RISC/I: A 32 bit RISC processor implemented in GaAs HMESFET SBFL

C. K. Tien, K. Lewis, R. Philhower, H.J. Greub, J. McDonald
{"title":"F-RISC/I: A 32 bit RISC processor implemented in GaAs HMESFET SBFL","authors":"C. K. Tien, K. Lewis, R. Philhower, H.J. Greub, J. McDonald","doi":"10.1109/GAAS.1993.394482","DOIUrl":null,"url":null,"abstract":"F-RISC/I, a reduced version of a fast RISC microprocessor, has been designed and fabricated using IBM's SBFL standard cell library and Rockwell International's 0.7 /spl mu/m HMESFET technology. F-RISC/I was designed in six months by two designers using commercial design automation tools. Simulations have shown 400 MHz operation. The chip contains 92,340 transistors on a 7/spl times/7 mm/sup 2/ die and dissipates 3.8 W. The F-RISC/I processor exemplifies the CPU architecture, circuit design, and testing developed to fully take advantage of GaAs technology for high speed computing.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"15th Annual GaAs IC Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1993.394482","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

F-RISC/I, a reduced version of a fast RISC microprocessor, has been designed and fabricated using IBM's SBFL standard cell library and Rockwell International's 0.7 /spl mu/m HMESFET technology. F-RISC/I was designed in six months by two designers using commercial design automation tools. Simulations have shown 400 MHz operation. The chip contains 92,340 transistors on a 7/spl times/7 mm/sup 2/ die and dissipates 3.8 W. The F-RISC/I processor exemplifies the CPU architecture, circuit design, and testing developed to fully take advantage of GaAs technology for high speed computing.<>
F-RISC/I:在GaAs HMESFET sffl上实现的32位RISC处理器
F-RISC/I是快速RISC微处理器的简化版本,使用IBM的SBFL标准单元库和罗克韦尔国际公司的0.7 /spl mu/m HMESFET技术设计和制造。F-RISC/I由两名设计师使用商业设计自动化工具在六个月内设计完成。仿真显示了400mhz的工作频率。该芯片在7/spl × 7 mm/sup /芯片上包含92340个晶体管,功耗为3.8 W。F-RISC/I处理器体现了CPU架构,电路设计和测试开发,以充分利用GaAs技术进行高速计算。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信