A 1.8 V 2 Gb NAND flash memory for mass storage applications

2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC. Pub Date : 2003-02-09 DOI:10.1109/ISSCC.2003.1234306

June Lee, Sungsoo Lee, O. Kwon, Kyeong-Han Lee, Kyongjoo Lee, D. Byeon, In-young Kim, Y. Lim, Byung-Soon Choi, Jong-Sik Lee, W. Shin, Jeong-Hyuk Choi, K. Suh

引用次数: 11

Abstract

A 1.8 V 2 Gb NAND flash memory is fabricated in a 90 nm process resulting in a 141 mm/sup 2/ die and a 0.044 /spl mu/m/sup 2/ effective cell. To achieve the high level of integration, critical layers are patterned with KF photolithography and phase-shift masks with proximity correction.

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1.8 V 2gb NAND快闪记忆体，适用于大容量储存应用

采用90nm工艺制备1.8 V 2gb NAND快闪记忆体，晶片尺寸为141 mm/sup 2/，有效单元尺寸为0.044 /spl mu/m/sup 2/。为了实现高水平的集成，关键层采用KF光刻和带接近校正的相移掩模进行图像化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC.

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