Electron emission and capture kinetics of a bistable medium-deep center in n-type bulk GaAs

Abstract

The interaction between EL5 and EL6 was studied by using isothermal constant-capacitance voltage transient spectroscopy (CCVTS). Anomalous filling time dependence of CCVTS peak heights for two trap components of EL5 and EL6 was observed in a long range filling pulse duration. The decrement of one EL6 constituent was nearly equal to the increment of one EL5 constituent. This variation could be reversed by controlling electron occupation fractions of these traps. The calculation by rate equations based on a bistable reaction model could explain well such characteristic behaviors.