Sapphire resonators + SiGe transistors based ultra low phase noise microwave oscillators

Proceedings of the 2005 IEEE International Frequency Control Symposium and Exposition, 2005. Pub Date : 2005-08-31 DOI:10.1109/FREQ.2005.1574047

R. Boudot, S. Gribaldo, V. Giordano, O. Llopis, C. Rocher, N. Bazin, G. Cibiel

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引用次数: 10

Abstract

This paper reports on ultra-low phase noise microwave oscillators combining a room temperature high-Q whispering gallery mode (WGM) sapphire resonator and an ultra-low phase noise SiGe HBT based amplifier. An original symmetrical duralumin cavity has been designed in order to improve the thermal behavior of the resonator. Coupled to a high-precision electronic temperature controller, the structure presents a sensitivity to thermal fluctuations of -0.05 ppm/K. The non-linear and noise modelling of different microwave SiGe amplifiers have been realized in order to compute and optimize their phase noise performances. An original double stage amplifier, whose phase noise performances are very close of those of a single stage one, has been designed for X-band applications. C-band oscillators phase noise as low as -42 dB.rad2.Hz1at 1 Hz Fourier frequency and -135 dB.rad2.Hz1 at 1 kHz offset have been measured. X-band oscillators simulated phase noise results foresee very encouraging results

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基于蓝宝石谐振器+ SiGe晶体管的超低相位噪声微波振荡器

本文报道了一种由室温高q低语通道模式(WGM)蓝宝石谐振器和基于SiGe HBT的超低相位噪声放大器组成的超低相位噪声微波振荡器。为了改善谐振腔的热性能，设计了一个原始的对称硬铝腔。与高精度电子温度控制器相结合，该结构对-0.05 ppm/K的热波动具有灵敏度。为了计算和优化不同的微波SiGe放大器的相位噪声性能，对其进行了非线性和噪声建模。设计了一种原始的双级放大器，其相位噪声性能与单级放大器非常接近。c波段振荡器相位噪声低至-42 dB.rad2。1 Hz傅立叶频率和-135 dB.rad2。测量了1khz偏移的Hz1。x波段振荡器模拟相位噪声的结果预示着非常令人鼓舞的结果

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of the 2005 IEEE International Frequency Control Symposium and Exposition, 2005.

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