Photocurrent measurements of electron traps on ITOX processed SIMOX structures

Abstract

Photocurrent measurements have been performed on internal thermal oxide (ITOX) buried oxide (BOX) SIMOX structures. After electron injection, from a 5eV mercury light source, the net electron trapping per area for the ITOX structure was found to be larger than that of a control SIMOX structure. This increase has been attributed to the ITOX's process influence on the formation of the ITOX/BOX oxide.