Atomic force microscopy and Raman scattering study of GaAs/InAs(111) A and B MOVPE heterostructures

Abstract

Surface morphology of GaAs/InAs [111] A and B heterostructures grown by metal organic vapour phase epitaxy have been investigated by atomic force microscopy. The large lattice mismatch induces the formation of pyramidal islands: their geometry greatly depends on the surface polarity and evolves with the growth time. The strain relaxation which accompanies the various growth mechanisms has been analyzed by Raman scattering. Valuable informations have been tracted from spatially-resolved measurements, resonance and symmetry-loss effects.