M. Ahmadi, A. Azarpeyvand, S. M. Fakhraie, R. Asadpour
{"title":"A novel hardware implementation for the IEEE 802.22 Turbo-Like Interleaver","authors":"M. Ahmadi, A. Azarpeyvand, S. M. Fakhraie, R. Asadpour","doi":"10.1109/ACQED.2012.6320505","DOIUrl":null,"url":null,"abstract":"In this paper, we present different designs for hardware implementation of the IEEE 802.22 Turbo-Like Interleaver. In addition to classical approaches such as direct and ROM-based implementation, a novel architecture is proposed. All of the new and classical designs are implemented using VHDL, synthesized with standard cells of a 180 nm typical CMOS technology and compared in terms of area, power, and delay. Based on the simulation results, the proposed method results in 33% and 46% improvements in terms of area and power compared to the direct method. It also shows 88% saving in area and 46% reduction in power consumption rather than ROM-based method. Furthermore, its operating frequency meets the standard requirements.","PeriodicalId":161858,"journal":{"name":"2012 4th Asia Symposium on Quality Electronic Design (ASQED)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 4th Asia Symposium on Quality Electronic Design (ASQED)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ACQED.2012.6320505","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, we present different designs for hardware implementation of the IEEE 802.22 Turbo-Like Interleaver. In addition to classical approaches such as direct and ROM-based implementation, a novel architecture is proposed. All of the new and classical designs are implemented using VHDL, synthesized with standard cells of a 180 nm typical CMOS technology and compared in terms of area, power, and delay. Based on the simulation results, the proposed method results in 33% and 46% improvements in terms of area and power compared to the direct method. It also shows 88% saving in area and 46% reduction in power consumption rather than ROM-based method. Furthermore, its operating frequency meets the standard requirements.