A negative differential resistance effect implemented with a single MOSFET from 375 k down to 80 k

Abstract

We report the implementation of a negative resistance (NR) device with a single MOSFET. This effect is achieved by biasing a regular 28-nm n-type Metal-Oxide Field-Effect Transistor (nMOSFET) as a Bipolar Junction Transistor (BJT) with the gate left floating. The NR device has a controllable peak-to-valley current ratio (PVCR) that goes from about 1.7 up to a value of 5.5 when varying the temperature from 375 K down to 80 K. Experimental results at room temperature were compared to numerical simulations that confirm the combined action of a superficial MOS-like-driven bipolar effect with that of a volumetric bipolar action as well. This hypothesis was confirmed by the cryogenic results.