E. McClure, Z. Bittner, M. Slocum, D. Forbes, S. Hubbard
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引用次数: 4
Abstract
Recent interest in growing high efficiency solar cells on polycrystalline “virtual” recrystallized substrates requires an understanding of the impact of substrate quality and growth nucleation characteristics. This work provides a study on the effects of substrate material, roughness, and crystallinity on efficiency of a GaAs solar cell. A variety of devices were grown on both monocrystalline and polycrystalline GaAs and Ge substrates, and the results were used to predict minority carrier diffusion length as a function of crystal grain size, material quality, and nucleation defect densities.