{"title":"A 1.2 Gbps CMOS DFE receiver with the extended sampling time window for application to the SSTL channel","authors":"Y. Sohn, Seungsoo Bae, Hong-June Park, Sooin Cho","doi":"10.1109/VLSIC.2002.1015055","DOIUrl":null,"url":null,"abstract":"A CMOS DFE (decision feedback equalization) receiver with a negligible overhead in chip area and power consumption was implemented by cross-coupling the outputs of a conventional 2-way interleaving receiver to the other side of the input. Application of this receiver to the SSTL interface channel showed the increase of sampling time window by 60 /spl sim/120% at data rates from 800 Mbps up to 1.2 Gbps. Chip area and power consumption are 80/spl times/100 /spl mu/m and 2.5 mW respectively with a 0.25 /spl mu/m 1-poly 5-metal CMOS process at the supply voltage of 2.5 V.","PeriodicalId":162493,"journal":{"name":"2002 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.02CH37302)","volume":"89 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"25","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.02CH37302)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.2002.1015055","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 25
Abstract
A CMOS DFE (decision feedback equalization) receiver with a negligible overhead in chip area and power consumption was implemented by cross-coupling the outputs of a conventional 2-way interleaving receiver to the other side of the input. Application of this receiver to the SSTL interface channel showed the increase of sampling time window by 60 /spl sim/120% at data rates from 800 Mbps up to 1.2 Gbps. Chip area and power consumption are 80/spl times/100 /spl mu/m and 2.5 mW respectively with a 0.25 /spl mu/m 1-poly 5-metal CMOS process at the supply voltage of 2.5 V.