Experiments and Modeling of Dynamic Floating Body Effects in 1T-Dram Fully Depleted SOI Devices

Abstract

We describe the transient floating-body mechanism which occurs in fully depleted SOI transistors and leads to a memory effect. A physics-based model for the potential variation with time is proposed and validated by numerical simulations. This model reproduces and clarifies the operation of the novel capacitor-less MSDRAM, the properties of which are discussed.