GaAs/AlGaAs heterojunction as a fast detector of infrared laser pulses

International Conference on Advanced Optical Materials and Devices Pub Date : 2008-09-10 DOI:10.1117/12.815954

S. Ašmontas, J. Gradauskas, V. Kazlauskaitė, A. Sužiedėlis, E. Sirmulis, M. Vingelis

引用次数: 0

Abstract

We present experimental study of photoresponse in small area GaAs/AlGaAs heterojunction planar detector induced by nanosecond CO2 laser pulses. This device revealed itself as a fast IR sensor operating at room temperature. Hot carrier effects are proposed to be responsible for the photoresponse formation.

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GaAs/AlGaAs异质结作为红外激光脉冲的快速探测器

实验研究了纳秒CO2激光脉冲诱导小面积GaAs/AlGaAs异质结平面探测器的光响应。该装置是一种在室温下工作的快速红外传感器。热载流子效应被认为是光响应形成的原因。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

International Conference on Advanced Optical Materials and Devices

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