Device modeling, optimization and analysis of CdTe solar cell

Abstract

The performance of the CdTe based solar cell is investigated using solar cell capacitance simulator (SCAPS) software. We have studied the influence of carrier density, thickness of the CdTe absorber layer, working temperature, CdZnS buffer layer thickness and its carrier density on the cell performance. The optimum thickness of absorber layer is found to be 2.0 µm with 0.02 µm buffer layer and 0.02 µm TCO layer. Various factors affecting the solar cell's performance has been rigorously investigated; more specifically physical parameters of buffer and absorber layer. By optimizing the device parameters we have achieved conversion efficiency of 15.46% with open circuit voltage (Voc) = 1.0984 V, short circuit current density (Jsc) = 16.2023 mA/cm2 and fill factor (FF) = 86.89.