SLC-ASM-HEMT: An Accurate compact model for SLCFET RF switch

Abstract

Accurate compact model for simulating radiofrequency (RF) switch characteristics of a Super Lattice Castellated Field Effect Transistor (SLCFET) is presented. The new model is developed by modifying the industry standard ASM-HEMT compact model formulations. It is found that multiple channels of SLCFET cause unique I-V and S-parameters behavior of this technology. An accurate, and computationally efficient compact model is obtained after modifying ASM-HEMT formulations for multi-channel device electrostatics in SLCFET. The model is shown to be in good agreement with measurements for DC and RF device characteristics.