M. Carpentiero, D. Caputo, Juri Gambino, N. Lovecchio, G. Cesare, A. Nascetti
{"title":"Array of differential photodiodes for thermal effects minimization in biomolecular analysis","authors":"M. Carpentiero, D. Caputo, Juri Gambino, N. Lovecchio, G. Cesare, A. Nascetti","doi":"10.1109/IWASI.2015.7184941","DOIUrl":null,"url":null,"abstract":"In this paper, we present a device that minimizes the effects of the temperature on light detection in lab-on-chip systems. The device is based on hydrogenated amorphous silicon p-type/intrinsic/n-type junction, fabricated on a glass substrate using thin-film technologies. The device structure is constituted by two series-connected amorphous silicon diodes: a blind one acting as dark reference and a photosensitive one. The signal measured at the output node of each element is equal to the difference of the current of the two diodes. This allows to minimize the temperature-dependent dark current contribution. The design of the photolithographic masks has been carefully carried out to pursue a perfect technological symmetry between the two diodes of the differential structure. Experimental data obtained by current-voltage characteristics show the correct operation of the individual diodes as well as the effectiveness of the differential structure to reject the common-mode signal induced by temperature variations. This feature makes the device a suitable candidate for analytical systems based on optical detection that involve thermal treatments.","PeriodicalId":395550,"journal":{"name":"2015 6th International Workshop on Advances in Sensors and Interfaces (IWASI)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 6th International Workshop on Advances in Sensors and Interfaces (IWASI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWASI.2015.7184941","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In this paper, we present a device that minimizes the effects of the temperature on light detection in lab-on-chip systems. The device is based on hydrogenated amorphous silicon p-type/intrinsic/n-type junction, fabricated on a glass substrate using thin-film technologies. The device structure is constituted by two series-connected amorphous silicon diodes: a blind one acting as dark reference and a photosensitive one. The signal measured at the output node of each element is equal to the difference of the current of the two diodes. This allows to minimize the temperature-dependent dark current contribution. The design of the photolithographic masks has been carefully carried out to pursue a perfect technological symmetry between the two diodes of the differential structure. Experimental data obtained by current-voltage characteristics show the correct operation of the individual diodes as well as the effectiveness of the differential structure to reject the common-mode signal induced by temperature variations. This feature makes the device a suitable candidate for analytical systems based on optical detection that involve thermal treatments.