T. Nakamura, K. Nakazato, T. Miyazaki, T. Okabe, M. Naga
{"title":"Integrated 84ps ECL with I2L","authors":"T. Nakamura, K. Nakazato, T. Miyazaki, T. Okabe, M. Naga","doi":"10.1109/ISSCC.1984.1156658","DOIUrl":null,"url":null,"abstract":"A side wall base contact structure used to fabricate 84ps ECL and 320ps I<sup>2</sup>L circuits with gate areas of 3500μm<sup>2</sup>and 112μm<sup>2</sup>will be covered.","PeriodicalId":260117,"journal":{"name":"1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.1984.1156658","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
A side wall base contact structure used to fabricate 84ps ECL and 320ps I2L circuits with gate areas of 3500μm2and 112μm2will be covered.