1/f Noise analysis of Hafnium Oxide based ReRAM devices using ac + dc measurement technique

Abstract

1/f Noise levels in Hafnium Oxide based bipolar ReRAM devices are studied using an ac + dc measurement technique. Preliminary results support the idea that the current conducts through a low resistive metal rich filament at low resistance state (LRS) and the current at high resistance state (HRS) is a trap-assisted current. The technique used here, allows to estimate the noise levels around 1 Hz.