Ultra-thin body MOS device technologies using high mobility channel materials

Abstract

MOSFETs using channel materials with low effective mass have been regarded as strongly important for obtaining high current drive and low supply voltage CMOS under sub 10 nm regime [1, 2]. From this viewpoint, attentions have recently been paid to III-V and Ge channels. This is because III-V semiconductors have extremely high electron mobility and low electron effective mass and Ge has extremely high hole mobility and low hole effective mass. In addition, ultra-thin body structure is mandatory for MOSFET with future technology nodes for suppressing short channel effects. In this presentation, the critical issues and the present status of ultrathin body III-V/Ge MOSFETs are addressed.