Structural and electrical properties of nanostructured TiO2 thin film at low molarity

Abstract

Titanium dioxide, TiO2 is a semiconductor material which has many useful properties. This paper is to clarify the use of sol-gel method in the production of nanostructured TiO2. Since sol-gel method is quite simple to compare with sputtering or pyrogenic process. The solution concentration will be varied in low molarity of 0.06M, 0.04M and 0.02M. Spin coating was used to deposit the nanostructured TiO2 on to the glass substrate and the surface morphology was observed using the Atomic Force Microscopy (AFM) and Field Emission Scanning Electron Microscopy (FESEM). The electrical properties were investigated by using two probe current-voltage (I-V) measurements to study the electrical resistivity behavior hence the conductivity of the film. Based on the result, higher the molarity of TiO2, the surface become more uniform and the IV becomes much better. The best thin film characteristic by low molarity parameter from 0.06M, 0.04M, 0.02M and 0.01M is the one with lowest molarity of 0.01M thin film.