Design of MEMS shunt switches at Ka band (30 GHz) using symmetrical pull-in technique

Abstract

This paper presents an alternating bias technique for shunt type micro-electro mechanical system (MEMS) switch other than using the conventional bias technique of actuation pads at the bottom of switch membrane. The residual gap is removed in proposed design. The centre frequency of the design is at 30 GHz with ±0.5 GHz band width. In UP state of switch, the simulated insertion loss is about 0.4 dB and return loss of 15 dB. In DOWN state, isolation is greater than 35 dB. The on wafer test result gives the insertion loss of 1.2 dB and return loss of 12 dB. Measured isolation of the switch is 38.5 dB.