{"title":"An Ultra-Low Power Time-Domain Temperature Sensor for IoT Applications","authors":"Xueting Pang, Kangkang Sun, Jian Guan, Yuqi Lin, Zhipeng Li, Feng Yan, Jingjing Liu, Yuan Jiang","doi":"10.1109/ICCS56666.2022.9936345","DOIUrl":null,"url":null,"abstract":"This paper proposed an ultra-low power time-domain temperature sensor circuit for IoT applications. It uses 2- T structures to generate reference voltage and complementary-to-absolute-temperature (CTAT) voltage. The reference voltage produces reference current by using current mirror to charge the capacitor. Then the voltage of capacitor is compared with the CTAT voltage to generate a temperature-dependent pulse. The pulse width is then digitized to represent the temperature. The temperature sensor is designed using 0.1S $\\mu$m CMOS process. The simulation results show that it measures temperature from −10°C to 60°C from 1V supply voltage. The power it costs is 570nW at a conversion speed of100 Sa/s.","PeriodicalId":293477,"journal":{"name":"2022 IEEE 4th International Conference on Circuits and Systems (ICCS)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE 4th International Conference on Circuits and Systems (ICCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCS56666.2022.9936345","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
This paper proposed an ultra-low power time-domain temperature sensor circuit for IoT applications. It uses 2- T structures to generate reference voltage and complementary-to-absolute-temperature (CTAT) voltage. The reference voltage produces reference current by using current mirror to charge the capacitor. Then the voltage of capacitor is compared with the CTAT voltage to generate a temperature-dependent pulse. The pulse width is then digitized to represent the temperature. The temperature sensor is designed using 0.1S $\mu$m CMOS process. The simulation results show that it measures temperature from −10°C to 60°C from 1V supply voltage. The power it costs is 570nW at a conversion speed of100 Sa/s.