An Ultra-Low Power Time-Domain Temperature Sensor for IoT Applications

Xueting Pang, Kangkang Sun, Jian Guan, Yuqi Lin, Zhipeng Li, Feng Yan, Jingjing Liu, Yuan Jiang
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引用次数: 2

Abstract

This paper proposed an ultra-low power time-domain temperature sensor circuit for IoT applications. It uses 2- T structures to generate reference voltage and complementary-to-absolute-temperature (CTAT) voltage. The reference voltage produces reference current by using current mirror to charge the capacitor. Then the voltage of capacitor is compared with the CTAT voltage to generate a temperature-dependent pulse. The pulse width is then digitized to represent the temperature. The temperature sensor is designed using 0.1S $\mu$m CMOS process. The simulation results show that it measures temperature from −10°C to 60°C from 1V supply voltage. The power it costs is 570nW at a conversion speed of100 Sa/s.
一种物联网应用的超低功耗时域温度传感器
提出了一种用于物联网应用的超低功耗时域温度传感器电路。它采用2- T结构产生基准电压和绝对温度互补电压。参考电压通过电流镜给电容器充电而产生参考电流。然后将电容电压与CTAT电压进行比较,产生温度相关脉冲。然后将脉冲宽度数字化以表示温度。温度传感器采用0.1S $\mu$m CMOS工艺设计。仿真结果表明,该系统可以在- 10°C到60°C的范围内测量1V电源电压下的温度。其功耗为570nW,转换速度为100 Sa/s。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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