An optimization design of CMOS buffer using RSM technique

Xuewen Gan, Hailan Zhu
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引用次数: 1

Abstract

This paper presents an optimization design method for a CMOS buffer. A model equation for CMOS buffer delay time has been derived using the RSM experiment design technique. An optimization was then performed by means of the equations of the delay time and silicon area to obtain the optimum number of stages and the size scale factor for the CMOS buffer, which meets the requirement of delay time while having the minimum area, or achieving the minimum delay time with acceptable area. The optimization design method and the related software can also be used for other problems.
基于RSM技术的CMOS缓冲器优化设计
本文提出了一种CMOS缓冲器的优化设计方法。利用RSM实验设计技术推导了CMOS缓冲延迟时间的模型方程。然后利用延迟时间和硅面积方程进行优化,得到CMOS缓冲器的最佳级数和尺寸比例因子,以满足延迟时间的要求,同时具有最小的面积,或在可接受的面积下实现最小的延迟时间。该优化设计方法及相关软件也可用于解决其他问题。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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