Integration of high-gain double heterojunction GaAs bipolar transistors with a LED for optical neural network application

Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Pub Date : 1989-08-07 DOI:10.1109/CORNEL.1989.79852

S. Lin, J.H. Kim, J. Katz, D. Psaltis

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引用次数: 4

Abstract

A 10*10 array of optical neurons consisting of monolithically integrated DHPTs (double heterojunction phototransistors), DHBTs (double heterojunction bipolar transistors), and LEDs (light-emitting diodes) was fabricated in an AlGaAs/GaAs/AlGaAs double heterostructure. A single DHBT exhibited a current gain as high as 500 with an ideality factor of 1.4. A Darlington transistor pair showed a combined current gain of 4000. The power density of the LED was about 300 W/cm/sup 2/. The integrated structure, however, showed SCR (silicon controlled rectifier) characteristics, which was attributed to the coupling of a parasitic p-n-p transistor to the n-p-n DHBT. This problem was eliminated by first etching a groove in the semi-insulating substrate between the LED and the Darlington transistor pair and then employing metallization to provide proper connection. However, overall gains for the Darlington transistor pair were low, probably due to the leakage currents caused by surface contamination and the Zn diffusion process.<>

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用于光学神经网络应用的高增益双异质结砷化镓双极晶体管与LED的集成

在AlGaAs/GaAs/AlGaAs双异质结构中制备了由单片集成双异质结光电晶体管DHPTs、双异质结双极晶体管dhbt和发光二极管led组成的10*10光神经元阵列。单个DHBT的电流增益高达500，理想系数为1.4。一对达林顿晶体管显示了4000的综合电流增益。LED的功率密度约为300 W/cm/sup / 2/。然而，集成结构显示出可控硅(可控硅)特性，这归因于寄生p-n-p晶体管与n-p-n DHBT的耦合。通过首先在LED和达林顿晶体管对之间的半绝缘衬底上蚀刻槽，然后采用金属化来提供适当的连接，消除了这个问题。然而，达灵顿晶体管对的总体增益很低，可能是由于表面污染和锌扩散过程引起的泄漏电流。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,

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