{"title":"Forming a rounded etched profile by using two-step anisotropic wet etching","authors":"M. Shikida, K. Kawasaki, K. Sato","doi":"10.1109/MHS.2000.903297","DOIUrl":null,"url":null,"abstract":"We used a numerical simulation system to investigate the use of chemical anisotropic etching to fabricate diaphragm structures with a rounded profile at the edge. The rounded-shape was formed by using a two-step KOH etching procedure. The etched profiles were categorized into five types and their shapes were determined by three parameters: the first etching depth, the second etching depth, and mask offset between the first and second etching steps. According to the simulation results, we made a rounded concaved shape at the periphery of a diaphragm structure in order to reduce the concentration of stress there.","PeriodicalId":372317,"journal":{"name":"MHS2000. Proceedings of 2000 International Symposium on Micromechatronics and Human Science (Cat. No.00TH8530)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"MHS2000. Proceedings of 2000 International Symposium on Micromechatronics and Human Science (Cat. No.00TH8530)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MHS.2000.903297","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
We used a numerical simulation system to investigate the use of chemical anisotropic etching to fabricate diaphragm structures with a rounded profile at the edge. The rounded-shape was formed by using a two-step KOH etching procedure. The etched profiles were categorized into five types and their shapes were determined by three parameters: the first etching depth, the second etching depth, and mask offset between the first and second etching steps. According to the simulation results, we made a rounded concaved shape at the periphery of a diaphragm structure in order to reduce the concentration of stress there.