Variable Gain Amplifier Based on MIFGMOS Transistor for Low Voltage Applications

I. Abdalla, F. Farag, M. Ibrahim
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Abstract

This paper introduces a method for designing a fully balanced Variable Gain Amplifier (VGA) depending on a trans-conductance variation and switched feedback resistance. In this method, the Floating Gate MOS transistor is used as a variable current source. Consequently, the trans-conductance of the gain MOS transistor is varying which is affecting the overall gain. Switching feedback resistance is varying the current which in turn affects the gain range. The proposed strategy is suitable for low voltage applications since the threshold voltage of the floating transistor can be adjusted. Power mitigation and linearity are developed in the variable gain amplifier stage. A simple common source and a fully balanced differential VGA are considered to illustrate the concept. The VGA circuit is designed and simulated using the 0.13μm CMOS process; the overall VGA consumes 1.3mA from a 1.8V supply. The VGA achieves gain variation depending on control voltage and feedback resistance with bandwidth up to 1MHz.
基于MIFGMOS晶体管的低压可变增益放大器
本文介绍了一种基于跨导变化和开关反馈电阻的全平衡可变增益放大器的设计方法。该方法采用浮栅MOS晶体管作为可变电流源。因此,增益MOS晶体管的跨导是变化的,这影响了总体增益。开关反馈电阻改变电流,进而影响增益范围。由于浮动晶体管的阈值电压可以调节,因此该策略适用于低电压应用。在变增益放大器级中,功率缓解和线性度得到了发展。一个简单的公共源和一个完全平衡的差分VGA被考虑来说明这个概念。采用0.13μm CMOS工艺设计并仿真了VGA电路;整个VGA从1.8V电源消耗1.3mA。VGA实现增益变化取决于控制电压和反馈电阻,带宽高达1MHz。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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