Intel LVS logic in CNT technology

Xuan Zeng, Bao Liu, Zhen Cao, Jun Tao, Philip Wong, Pushan Tang
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引用次数: 1

Abstract

In this paper, we systematically evaluate combinational logic families for CNT technology implementation for a variety of logic families, signal transition times, and transistor parameters. We compare CMOS static logic, and Intel LVS logic in CNT and silicon technologies by SPICE simulation based on Predictive Technology Model and Stanford compact CNFET models. We observe that CMOS static logic in CNT technology achieves limited (e.g., 3.44×) performance improvement and (e.g., 3.83×) power consumption reduction, while Intel LVS logic achieves more significant performance improvement and orders-of-magnitude of power consumption reduction. Intel LVS logic achieves an average of 4.02× performance improvement and 1137.64× power consumption reduction compared with CMOS static logic in silicon for the same combinational logic functions and input signals, and enhanced reliability, making it an ideal combinational logic circuit paradigm in CNT technology.
碳纳米管技术中的英特尔LVS逻辑
在本文中,我们系统地评估了用于碳纳米管技术实现的各种逻辑族,信号转换时间和晶体管参数的组合逻辑族。基于预测技术模型和斯坦福紧凑CNFET模型,通过SPICE仿真比较了CMOS静态逻辑和英特尔LVS逻辑在碳纳米管和硅技术中的应用。我们观察到,碳纳米管技术中的CMOS静态逻辑实现了有限的(例如3.44倍)性能提升和(例如3.83倍)功耗降低,而英特尔LVS逻辑实现了更显著的性能提升和数量级的功耗降低。在相同的组合逻辑功能和输入信号下,英特尔LVS逻辑与CMOS静态硅逻辑相比,平均性能提高4.02倍,功耗降低1137.64倍,可靠性增强,是碳纳米管技术中理想的组合逻辑电路范例。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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