Compact modeling of advanced Si-IGBT for circuit design

Abstract

A physics-based compact model of insulated-gate bipolar transistors (IGBTs) models is presented. The IGBT structure consisting of a MOSFET and a bipolar parts, has been developed to realize low power loss circuits. Modeling new phenomena observed specific for IGBT is important for high precision circuit design. HiSIM_IGBT is the first compact model developed for real industrial applications. The model has been expended for two IGBT descendants, the Injection-Enhanced insulated-gate bipolar transistor (IEGT), and Partially-Narrow-Mesa (PNM) IGBT. The structures have been developed to provide solutions for two contradictory requirements. Modeling approach of the both, structures are presented here. Evolution of the power electronics will be reviewed together.