Series resistance and mobility in mechanically-exfoliated layered transition metal dichalcogenide MOSFETs

Abstract

We show that transmission line method, where a set of devices are used, does not always correctly estimate series resistance of mechanically-exfoliated transition metal dichalcogenide MOSFETs. We calculate series resistance and carrier mobility from current-voltage characteristics of a single device. We show that series resistance should be considered for accurate mobility calculation even for long channel devices.