Transient analysis of BJT using all injection level TLEC model

2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI:10.1109/ICMEL.2000.840543

T.V. Pesic, T. Ilic, N. Jankovic, J. Karamarković

引用次数: 1

Abstract

Transmission line equivalent circuit model of bipolar junction transistor has been generalized to include all injection level case and model Kirk effect. The obtained model has been used for simulation of time domain transient analysis.

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采用全注射级TLEC模型对BJT进行瞬态分析

将双极结晶体管的传输线等效电路模型推广到包括所有注入电平情况和柯克效应模型。该模型已用于时域瞬态分析仿真。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)

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