Investigation of deep-level states in bulk and low-temperature MBE semi-insulating GaAs by admittance transient spectroscopy

Abstract

A new modification of DLTS applicable to semi-insulating (SI) materials based on simultaneous capacitance C(t) and ac conductance G(t) transient analysis, Admittance Transient Spectroscopy (ATS), is introduced. Formulas for C(t), G(t), their differential dC(t), dG(t) and correlated Sc(T), SG(T) forms are presented. The most important features of the ATS based on the simulation are summarized. ATS was applied to the investigation of deep-level states in bulk undoped and low temperature MBE SI GaAs. Some of the results are briefly discussed in the context of the previously published ones.