Extreme Temperature (> 200 °C), Radiation Hard (> 1 Mrad), Dense (sub-50 nm CD), Fast (2 ns write pulses), Non-Volatile Memory Technology

Abstract

We have developed an ultra-dense (sub-50 nm device diameter), ultra-fast (2 ns write pulse), non-polar, non-volatile memory that can operate at > 200°C temperatures while being immune to radiation (> 1 Mrad (SiO2)). Our technology, CeRAM, is integrated into the back-end-of-line (BEOL) 1 kb arrays and is compatible with high-temperature substrates including SiC, GaN, as well as Silicon on insulator (SOI). CeRAM can retain its memory state at 400°C for one hour bake. Such characteristics are ideal for multiple applications that include automotive, industrial mining and drilling, as well as defense and space.