A 1 Gb multilevel AG-AND-type flash memory with 10 MB/s programming throughput for mass storage application

2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC. Pub Date : 2003-02-09 DOI:10.1109/ISSCC.2003.1234305

K. Yoshida, O. Tsuchiya, Y. Yamaguchi, J. Kishimoto, Y. Ikeda, S. Narumi, Y. Takase, K. Furusawa, K. Izawa, T. Yoshitake, T. Kobayashi, H. Kurata, M. Kanemitsu

引用次数: 9

Abstract

A 1 Gb multilevel flash memory is fabricated in a 0.13 /spl mu/m CMOS process. The chip area of 95 mm/sup 2/ is achieved using AG-AND-type cells with a multilevel program cell technique and compact write-buffer. By use of constant-charge-injection programming and multi-bank operation, high-speed programming throughput of 10 MB/s achieved.

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1gb多级ag - and型闪存，具有10mb /s的编程吞吐量，适用于大容量存储应用

以0.13 /spl mu/m的CMOS工艺制备了1gb多电平快闪存储器。芯片面积为95 mm/sup 2/，采用ag - and型单元，采用多级程序单元技术和紧凑的写缓冲区。采用恒充注编程和多银行操作，实现了10mb /s的高速编程吞吐量。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC.

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